| 摘要 |
PURPOSE:To increase the electron density near thin film forming substrate fixed to the other electrodes and to accelerate the changing of reactive gas into plasma for increasing the density of filming species and augmenting the filming speed of thin films by a method wherein through holes are made outside the other electrode mounting parts of the substrate. CONSTITUTION:A flat plate type RF electrode 6 is arranged in a reaction chamber 1 fed with reactive gas, flat plate type opposite electrodes 7 fixed on a thin film forming substrate 8 are arranged in parallel with the RF electrode 6 and then both electrodes 6, 7 are impressed with high-frequency voltage from a high-frequency power supply 9 to turn the reactive gas plasmatic by RF glow discharge so that thin films comprising the constituents of the reactive gas turned plasmatic may be formed on the substrate 8. At this time, through holes 10 are made outside the opposite electrodes 7 mounting parts of the substrate 8. Consequently, electrons can pass the through holes 10 to increase the electrons of the opposite electrodes 7 reaching the opposite side to the RF electrode 6. Through these procedures, the electron density near the substrate 8 is increased, the changing of the reactive gas into plasma is accelerated and the density of filming species is increased to notably augment the forming speed of thin films. |
