发明名称 Semiconductor component which can be controlled by the field effect
摘要 An IGBT (Isolated Gate Bipolar Transistor) continuously requires a control voltage in the switched-on state. This can be avoided by the semiconductor body (1) having a further zone (7) on the source side, which zone (7) is of the same conductance type as the base zone (5). This zone (7) is connected to the gate electrode (10). In consequence, the switched-on IGBT remains switched on even after the gate voltage has been disconnected. It can be disconnected by the zone (7) and the gate electrode (10) being connected to source potential. <IMAGE>
申请公布号 DE3804254(A1) 申请公布日期 1989.08.24
申请号 DE19883804254 申请日期 1988.02.11
申请人 SIEMENS AG, 1000 BERLIN UND 8000 MUENCHEN, DE 发明人 HERTRICH, HELMUT, 8049 WENG, DE;TIHANYI, JENOE, DR., 8000 MUENCHEN, DE
分类号 H01L29/10;H01L29/739 主分类号 H01L29/10
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