| 摘要 |
PURPOSE:To obtain a high-quality garnet film with liquid phase epitaxial growth by a method wherein both Bi<3+> and Si<4+> are introduced simultaneously to cancel their shortcomings. CONSTITUTION:A garnet material is so constituted that a garnet film formed through epitaxial growth on a GGG substrate is to contain Bi<3+> not less than 0.05mol but not greater than 0.7mol per molecular formula weight and, at the same time, Si<4+> not less than 0.04mol but not greater than 1.2mol per molecular formula weight. During growth of an Si-substituted garnet film, an amount of Bi substitution is increased with the growth temperature being lowered, but simultaneously an amount of Si substitution is also increased. At this time, a change in the lattice constant with respect to the growth temperature becomes small not greater than 0.5 as compared with the prior art. Further, in a range of growth temperature not greater than + or -2.5 deg.C, the missmatch of lattice constant between the substrate and the film becomes not greater than + or -0.0005Angstrom . This permits to reduce the missmatch of the lattice constant. |
