| 摘要 |
An X-ray mask for producing micro scale images on semiconductor substrates is constituted such that a grounded charge conducting film 30, e.g. Al, is deposited between X-ray transmissive base plate 20 e.g. SiC or SiNx and an X-ray absorbing image 40, e.g. metal to absorb the charges accumulated around the X-ray absorbing image, thereby making it possible to correctly inspect the line width and defects of the pattern of the mask. The charges accumulated around the X-ray absorbing image in the prior art make the scanning electron beams deflected so that correct measuring of the pattern of the mask becomes impossible. Therefore, the charge conducting film which is grounded absorbs the produced charges before they accumulate, thereby keeping the scanning electron beams from being deflected, and ultimately making it possible to measure the pattern of the mask correctly. <IMAGE> |
