| 摘要 |
PURPOSE:To make it possible to form a pattern having a line width of 0.5mum or less with a compact apparatus, by bringing a mask and a substrate to be machined into close contact, fixing them in a vacuum container, using a hydrogen discharge tube as a light source, and perpendicularly projecting the light on the substrate to be machined through a mask. CONSTITUTION:A hydrogen discharge tube 11 is attached to a vacuum container 13. A mask 15 and a substrate to be machined 16 are brought into close contact with a holding tool 14 and fixed in the vacuum container 13. A vacuum pump 17 exhausts air which is an absorbing factor of vacuum ultraviolet rays 12 that are generated from the hydrogen discharge tube 11. The intense light is projected on the mask 15 and the substrate to be machined 16. As the mask 15, a mask wherein a line and space pattern is formed on an MgF2 crystal with Cr as a mask material is used. For the substrate to be machined 16, PMMA based photoresist (positive resist OEBR-1000 made by Tokyo Ohka Kogyo Co., Ltd.), i. e., organic resist, is applied on a silicon wafer with a spinner to a thickness of about 100nm. In this constitution, an excellent transfer pattern having the minimum line width of 0.3mum is obtained for the exposure time of about two minutes. |
