发明名称 |
Anisotropic elective etch of nitride. |
摘要 |
<p>A gas mixture for use in the selective dry etching of a nitride insulator layer (16) relative to an oxide insulator layer (12) formed on a silicium substrate (10) comprising: a gas mixture containing chlorine and oxygen. The oxygen in this gas mixture must comprise 15% or less by volume. In a preferred process embodiment for etching Si3N4 and leaving a layer of SiO2 therebelow, Cl2 gas may be used in combination with 12% or less oxygen by volume. Etch selectivity of greater than five to one is achieved with this gas mixture when a plasma RF frequency of less than 1 MHz is utilized. When a high frequency RF component in the range of 10 - 27 MHz is added to the RF excitation signal, then an etch uniformity of better than 3% is achieved.</p> |
申请公布号 |
EP0329586(A1) |
申请公布日期 |
1989.08.23 |
申请号 |
EP19890480009 |
申请日期 |
1989.01.17 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BONDUR, JAMES ALLAN;MARTINET, FRANCOIS DOMINIQUE |
分类号 |
H01L21/302;H01L21/3065;H01L21/311 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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