| 摘要 |
Fine gold alloy wire for connecting semiconductor elements has the composition 0.0003-0.010 wt.% one or more of rare earths, Sc and Y, balance Au and impurities. Alloys containing 0.0003-0.010 wt.% one or more of La, Ce, Pr, Nd. and Sm may also contain 0.0001-0.0060 wt.% Ge and/or Be and/or Ca. The wire is useful in the production of transistors, ICs and LSIs, and has high tensile strength both at room temperature and elevated temperature, can be drawn to a diameter of 0.05mm or less, and is resistant to fracture when used to make connections. The additions of Ge, Be and Ca give improved bonding strength and a high softening point. |
