发明名称 SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURE THEREOF
摘要 PURPOSE:To increase the intensity of light through an optical fiber as a result of that the output of the light is increased without increasing the area of a light emitting region even if a current is increased by forming a current blocking layer of an N-type AlInAs layer. CONSTITUTION:When a bias in which a P-type electrode 20 becomes positive is applied between P-type and N-type electrodes 9 and 10, an N-P-N-P structure of an N-type InP first clad layer 2, a P-type InGaAsP active layer 3, a P-type InP second clad layer 4, an N-type AlInAs current blocking layer 6 and a P-type InP third clad layer 7 is formed on a region in which the layer 6 is interposed between both the electrodes. Accordingly, no current flows, and a current flows through a stripelike groove 5 formed on the layer 6. Electrons and holes injected to the layer 3 due to the flow of the current are recombined, and light is radiated from a light emitting region 22. The light radiated from the region 22 is determined so as to most efficiently introduce the light into a filter in the width of the groove 5 introduced by the fiber.
申请公布号 JPH01209771(A) 申请公布日期 1989.08.23
申请号 JP19880036072 申请日期 1988.02.18
申请人 MITSUBISHI ELECTRIC CORP 发明人 YAGI TETSUYA
分类号 H01L33/14;H01L33/30 主分类号 H01L33/14
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