发明名称 DICING OF SEMICONDUCTOR WAFER
摘要 <p>PURPOSE:To ultrasonically clean adhesive adhered to a grindstone and consequently prevent the loading of the grindstone during cutting from occurring and make it possible to prolong the service life of the grindstone by a method wherein ultrasonic vibration is applied to the grindstone of a dicing saw after every end of water cutting in the process of the complete separation reaching an adherent sheet from the surface of a wafer. CONSTITUTION:In the process of the complete separation reaching an adherent sheet from the surface of a wafer, ultrasonic vibration is applied with an ultrasonic vibrator 2 to a grindstone, to which adhesive is adhered, for about one minute ranging from the end of wafer cutting to the start of next wafer cutting and simultaneously the ultrasonic cleaning is done by utilizing pure water 5 jetting from a cleaning nozzle 4. As a result, next wafer cutting can be done by a loading-free grindstone 3.</p>
申请公布号 JPH01210314(A) 申请公布日期 1989.08.23
申请号 JP19880036951 申请日期 1988.02.18
申请人 NEC CORP 发明人 ETO KEIKI
分类号 H01L21/301;B28D5/00;H01L21/78 主分类号 H01L21/301
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