发明名称 |
MIS device with auxiliary gate and manufacturing method thereof. |
摘要 |
In a MOSFET of an LDD structure, a side wall (51) is made conductive and connected to a gate (3) through a resistance (13) thereby to cause hot carriers taken into the side wall (51) to be discharged to a gate (3) through the resistance (13), whereby a channel resistance is prevented from being increased by an effect of carriers accumulated in the side wall (51). As a result, a reliable MOSFET with a short channel can be provided which is not degraded even if it is used for a long time. |
申请公布号 |
EP0329047(A2) |
申请公布日期 |
1989.08.23 |
申请号 |
EP19890102412 |
申请日期 |
1989.02.13 |
申请人 |
HITACHI, LTD. |
发明人 |
MINAMI, MASATAKA;WAKUI, YOUKOU;NAGANO, TAKAHIRO |
分类号 |
H01L21/28;H01L21/336;H01L29/423;H01L29/43;H01L29/49;H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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