Method of forming thin epitaxial layers using multistep growth for autodoping control

摘要

A method of forming thin epitaxial layers by subjecting a substrate to a high temperature prebake followed by a medium temperature capping seal and a low temperature deposition is disclosed. In a preferred embodiment the epitaxial layer is formed by low pressure chemical vapor deposition of dichlorosilane. The method has been demonstrated to alleviate the increase in autodoping and epitaxial defects normally associated with lowering the deposition temperature.