发明名称 |
Semiconductor devices and methods of making such devices |
摘要 |
Single GaAs quantum well or single GaAs active layer or single reverse interface structures with AlxGa1-xAs barrier layers have improved qualities when one or more narrow bandgap GaAs getter-smoothing layers, which are thin, are grown and are incorporated in the barrier layer before and in close proximity to the active layer.
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申请公布号 |
US4860068(A) |
申请公布日期 |
1989.08.22 |
申请号 |
US19880149994 |
申请日期 |
1988.01.27 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY, AT&T BELL LABORATORIES |
发明人 |
GOSSARD, ARTHUR C.;MILLER, ROBERT C.;PETROFF, PIERRE M. |
分类号 |
H01L21/20;H01L29/205 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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