| 摘要 |
According to the present invention, an IC device includes an input PNP transistor, a first NPN transistor, a second NPN transistor and an SBD; and the device is characterized in that an isolation layer (16) is provided between the input PNP transistor (1) and the SBD (7); and in that the lead wires by which the emitter of the first NPN transistor (11) and the base of the second NPN transistor (9) are connected to the anode of the SBD (7) are shorter than the lead wire between the base of the input PNP transistor (1) and the cathode of the SBD (7).
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