| 发明名称 |
Method for measuring plasma properties in semiconductor processing |
| 摘要 |
An apparatus and method for measuring the concentration profile of an active species across the surface of a semiconductor slice in a plasma reactor is disclosed that permits uniformity of etch and deposition across the surface of the semiconductor slice.
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| 申请公布号 |
US4859277(A) |
申请公布日期 |
1989.08.22 |
| 申请号 |
US19880189572 |
申请日期 |
1988.05.03 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
BARNA, GABRIEL G.;ECONOMOU, DEMETRE J. |
| 分类号 |
G01N21/62;C23C16/50;C23F4/00;H01J37/32;H01L21/205;H01L21/302;H01L21/3065;H01L21/31 |
主分类号 |
G01N21/62 |
| 代理机构 |
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