发明名称 |
Method of producing the gate electrode of a field effect transistor |
摘要 |
A method of forming a self-aligned gate electrode of a field effect transistor, in which a resist pattern is formed on a substrate by lithography, an ion-implanted layer in the substrate at the side of the resist is formed by ion implantation, an insulating film is formed on the substrate by electron cyclotron resonance plasma chemical vapor deposition, the resist pattern and a part of the insulating film on the resist pattern removed by lift-off to thereby form an insulating pattern with an opening, the substrate annealed to activate said ion-implanted layer and a gate electrode formed in the opening by a spacer lift-off method.
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申请公布号 |
US4859618(A) |
申请公布日期 |
1989.08.22 |
申请号 |
US19870122438 |
申请日期 |
1987.11.19 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
SHIKATA, SHINICHI;HAYASHI, HIDEKI |
分类号 |
H01L21/027;H01L21/285;H01L21/338 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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