| 摘要 |
A physical vapor deposition system is disclosed for routinely achieving unprecedented processing uniformity of thin films on substrates of a size comparable to or larger than the source. The system includes a plurality of substrates; a plurality of deposition, etching, and/or heating sources; a plurality of mobile in-situ process monitors for obtaining the fundamental processing profiles that characterize the processing properties of each source; and mobile fixturing responsive to the fundamental processing profiles for effecting prescribed motion scenarios of the substrate relative to the source; to thus provide the means for achieving extremely uniform as well as an unprecedented range of prescribed non-uniform final thin film processing profiles, irrespective of the size of the substrate relative to the size of the source.
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