| 摘要 |
PURPOSE:To prevent defective contact at a contact hole, by providing auxiliary openings on an insulation film in such a way that the openings come close to the contact hole, thereby supplying Si from the openings into Al. CONSTITUTION:In addition to openings 6, auxiliary openings 8 are opened in an insulation film 5 covering a polycrystal Si film 3 in such a way that the auxiliary openings come close to the openings 6 and surround them. If the distance between both openings 6 and 8 is prepared within a diffusion distance at an annealing temperature, then Si dissolves in an Al film 7 as shown in the direction of the arrows 31 and diffuses onto the openings 6. In the case where the auxiliary openings 8 are provided so that they surround the openings 6 so as to connect wiring with resistance and they approach within a diffusion distance of Si, such additional openings act as supplying sources of Si into Al and then, the consumption of Si for connection in the openings decreases. Thus, no defective contact develops in the openings 6 which are surrounded by the openings 8. |
