| 摘要 |
PURPOSE:To avoid the deterioration of characteristics and the development of defective bonding, by exposing the first and second insulation films by ion-milling of a multilayer metal, a photoresist, and the like, thereby removing selectively these insulation films by chemical etching. CONSTITUTION:A liquid where silicon compounds are dissolved is coated on a protecting film 12 located on a substrate 11 and the first insulation film 13 is formed by drying the protecting film coated with the above liquid. After removing the above film 13 selectively, a multilayer metal is deposited on the substrate and similarly in the case of the first insulation film 13, the liquid is coated on the multilayer metal and the second insulation film 17 is formed after drying its metal coated with the liquid. Then, a part forming an electrode for a pad is masked by a photoresist 18. After that, inactive ion beams are irradiated extensively in the form of shower to the above part to expose the first and second insulation films 13 and 17 by treating the second insulation film 17 except a part below a mask region, multilayer metal, and the photoresist 18 with an ion-milling process. Subsequently, these insulation films 13 and 17 are removed selectively by chemical etching. This approach avoids the deterioration of characteristics due to over-etching of the protecting film 12 and prevents the development of defective bonding because of sticking of the resist. |
