| 摘要 |
<p>PURPOSE:To manufacture the title matrix array substrate by using a pattern of the first metallic layer which becomes the lower metal of a non-linear resistance element as a mask and working a second metallic layer by a self-matching method to decrease the photolithography process to two times. CONSTITUTION:The first metallic layer 21 is formed to a thin film by a method of vapor-deposition, sputtering, etc., the first photoetching process is executed exactly,the first metallic layer 21 is brought to etching, and an insulator layer 22 is formed as a pattern thereon. A pattern of the second metallic layer 23 is formed thereon, but a precise exposure is omitted, and by a self-aligning method for likening the pattern of the first metallic layer 21 to a mask by radiating a light beam from a substrate 20 side, patterning of a resist is executed. In this case, after a transparent conductive film 25 has been formed, it is used as a mask, and the second metallic layer 23 is brought to etching. In such a way, by simplifying a photolithography process and omitting once, a matrix array substrate having a satisfactory characteristic can be obtained.</p> |
