| 摘要 |
PURPOSE:To make it possible to grow an epitaxial layer having uniform crystallizability and crystal composition by a method wherein a substrate, which becomes a dummy, is provided closely contacting to the circumference of a single or a plurality of substrates to be used for epitaxial growth. CONSTITUTION:InP dummy substrates 2-5 are provided closely contacting to the circumference of an InP substrate 1, an InGaAsP epitaxial layer is grown. The distribution of the peak wavelength of the photoluminescence is shown in the diagram. The composition of a mixed crystal semiconductor is formed completely uniform in lateral direction, and said distribution can be seen a little in the longitudinal direction. To be more precise, dummy substrates 2-5 are arranged on the region where the catalytic effect of substrate will be made small, and the degree of substrate catalytic effect same as the center part of the InP substrate 1 is given by the above-mentioned region. As a result, the epitaxial layer having uniform crystallizability and crystal composition can be grown. |
