| 摘要 |
PURPOSE:To protect a driving element such as TFT (thin-film transistor) from electrostatic destruction without contaminating and damaging rubbing cloth by inserting earthed metallic pin into a narrow hole pierced into a short ring and performing a rubbing process. CONSTITUTION:A TFT base plate 4 is manufactured by forming plural driving electrodes 2, each of which is composed of an a-SiTFT and picture element electrode, and a short ring 3 which is constituted by short-circuiting the ring 3 to the row- and column-electrode lines connected with the a-SiTFTs. Then an orientation film is formed by applying polyimide resin, etc., to the TFT base plate. After forming the orientation film, a narrow hole 5 is installed to one point of the internal section of the short ring 3 and a metallic pin 6 whose outer diameter is almost equal to the inner diameter of the hole 5 is inserted into the hole 5 with the bottom of the pin 6 being earthed. Then a rubbing process is performed by rubbing the surface of the orientation film with cloth in the arrow direction A. Therefore, the cloth, etc., is not contaminat ed and damaged during the course of the rubbing process and the electrostatic destruction of a driving element, such as TFT be prevented effectively. |
