| 摘要 |
PURPOSE:To realize a semiconductor device having internal metallic wires hardly disconnected and hardly brought into contact with an adjacent lead, without changing thickness thereof, by providing a step surface in an insulating substrate at a level lower than the top face of a semiconductor chip by a predetermined dimension and connecting electrode pads on the semiconductor chip with respective leads on the step surface corresponding to the electrode pads by means of metallic wires. CONSTITUTION:A recess is formed in predetermined dimensions on the principal surface of an insulating substrate 1 so as to provide a securing surface 8 on which a semiconducting chip 2 is to be secured. The surface of the insulating substrate 1 is further stepped down around the securing surface 8 such that the securing surface is surrounded by a step surface 6. Height of the step surface 6 is determined such that, when a semiconductor chip 2 to be secured has thickness of 300mum, the step surface 5 is at a level lower than the surface of the semiconductor chip at least by 100mum. Then, a plurality of leads 3 are formed by the screen printing or metal vapor deposition process for example such that they are extended from the step surface 6 to the insulating substrate 1. The semiconductor chip 2 is then bonded to the securing surface 8 by means of an epoxy resin. Electrode pads 5 on the semiconductor chip 2 are connected with the respective leads 3 on the step surface 6 corresponding to the electrode pads 5 through metallic wires 4 by the wire bonding technique. |
