| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
Electrostatical breakage of a semiconductor device, including an epitaxial layer and a buried layer thereunder, connected to an outer signal terminal, can be prevented by forming an impurity region in the epitaxial layer so as to form a PN junction between the buried layer and the impurity region. The impurity region is connected to a power source or ground. |
| 申请公布号 |
DE3380194(D1) |
申请公布日期 |
1989.08.17 |
| 申请号 |
DE19833380194 |
申请日期 |
1983.03.29 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
ENOMOTO, HIROMU;YASUDA, YASUSHI;SHIMAUCHI, YOSHIKI;TAHARA, AKINORI |
| 分类号 |
H01L21/74;H01L21/822;H01L23/60;H01L23/62;H01L27/02;H01L27/04;H01L27/06;H01L29/47;H01L29/866;H01L29/872;(IPC1-7):H01L27/02 |
主分类号 |
H01L21/74 |
| 代理机构 |
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