| 摘要 |
PURPOSE:To make it possible to form stacking faults as obtained by sand blasting without letting abrasive grains fly or without leaving scratches on a wafer, by working the wafer by means of a polishing tape coated with abrasive grains while the polishing tape is vibrated. CONSTITUTION:A polishing tape 9 has a width larger than a diameter of a wafer 1 and at least one side thereof is coated with abrasive grains of silicon dioxide(SiO2), silicon carbide(SiC) etc. The tape is arranged across the wafer 1 such that the tape covers a half of the surface thereof to be treated and the side of the tape coated with the abrasive grains is opposed to the surface to be treated. The tape is then fed intermittently by a certain distance along the length by means of a tape feeding means. An air nozzle 14 is arranged in opposition to the side face of the polishing tape 9 and compressed air from an air source 15 is injected through an injection port 14a such that the jet of air flows across the width of the tape 9 along the top and rear faces of the tape. The polishing tape 9 is thereby vibrated in the direction orthogonal to the surface of the tape. This vibration makes the abrasive grains on the polishing tape 9 collide on the wafer 1, whereby the wafer 1 is microstress worked.
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