| 摘要 |
<p>PURPOSE:To easily form a semiconductor magnetic memory, to attain high integration and to successively execute reading and writing by arranging a magnetic induction transistor in a reproducing part and executing the magnetization of a magnetic substance in an inner surface direction. CONSTITUTION:A storing part is composed of a magnetic substance 8 and a conductor 9 and the magnetic induction transistor, which is composed of an emitter 2, a base 3 and collectors 4 and 5 formed on a substrate 1 constitutes a reproducing part sensor. Since the magnetic substance 8 causes a bit to be correspondent in the direction of the magnetization as a magnetic characteristic, uniaxial anisotropy is obtained and the magnetization is executed in an easy shaft direction in the surface. The reproducing sensor part goes to be enough even when the direction and size of the magnetization in the magnetic substance and a current from the emitter 2 is divided to the two collectors 4 and 5. Then, the size of a magnetic field is made correspondent to the change quantity of a collector current. Thus, the non-volatile semiconductor memory, which can be easily formed and highly integrated, to successively execute the reading and writing can be obtained.</p> |
