发明名称 |
SIMPLIFIED PLANARIZATION PROCESS FOR POLYSILICON-FILLED TRENCHES |
摘要 |
<p>The method of planarizing polysilicon-filled trenches involves first filling the trenches with an undoped polysilicon until the upper surface is substantially planar. The polycrystalline silicon is then heavily doped by means of diffusion of a dopant from the upper surface. The time and temperature of the diffusion are carefully controlled providing for the dopant to penetrate the polysilicon to a depth level with the tops of the trenches. A selective etchant is then utilized which removes the heavily doped polysilicon and leaves the undoped polysilicon untouched in the trenches.</p> |
申请公布号 |
EP0166207(B1) |
申请公布日期 |
1989.08.16 |
申请号 |
EP19850106318 |
申请日期 |
1985.05.23 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
SHEPARD, JOSEPH F. |
分类号 |
H01L21/76;H01L21/302;H01L21/3065;H01L21/3215;H01L21/763 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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