| 摘要 |
<p>A thin film forming apparatus comprises a plasma generating chamber (14) into which is introduced a gas to generate plasma therein; a microwave introduction window (16) connected to the plasma generating chamber (14) for introducing the microwave into the latter, a first target (17) and a second target (18) made of materials to be sputtered and disposed at both end portions of interior of the plasma generating chamber (14), respectively, at least one of the first and second targets (17,18) being in the form of a tube, at least one power supply (19) for applying a negative voltage to the first and second targets (17,18), magnetic field producing means (21) for producing the magnetic field and the magnetic flux leaving one of the first and second targets (17,18) and entering the other, and a specimen chamber (23) communicated to the plasma generating chamber (14) and having a substrate holder (24) installed therein. High-density ECR plasma generated within the plasma generating chamber (14) sputters the targets (17,18) so that the sputtered target materials are deposited on a substrate (25) to form a thin film. It is also possible to extract ions in plasma by incorporating an ion extraction mechanism at the lower end of the plasma generating chamber.</p> |
