| 摘要 |
PURPOSE:To improve the production yield of a MOSIC, etc., having a fine structure by constituting a positive type photoresist film of an intermediate layer composed of a photoresist film, and an upper and a lower layers composed of a photofading film having the photofading property against an exposure wavelength which are mounted on a substrate and exposing the positive type photoresist film. CONSTITUTION:A high reflection film 22 composed of aluminium and having high reflecting power is mounted on the substrate 10 which is formed a rugged gradation having 1mum in thickness. Next, a lower layer photofading film 32 having the photofading sensitivity of 1,000mj is formed on the film 22 according to a spin coating method. And then, the positive type photoresist film 12 having an average film thickness of about 1mum is formed on the film 32, followed by forming the upper layer fading film 34 having the photofading sensitivity of 350mj on the film 12. Next, the obtd. photoresist film is exposed with an exposure of 400mj, followed by developing it. As the photofading films 32 and 34 formed on the upper and the lower layers respectively are water-soluble, the films dissolve in a developing solution. After developing the films 32 and 34, the films are washed with water, thereby obtaining a positive type photoresist film pattern 14 having a good pattern profile. |
