| 摘要 |
PURPOSE:To form a fine pattern of the title composition by dissolving a specified silylated polyorganosiasesquioxane and a benzophenone derivative in an org. solvent or a ketone solvent. CONSTITUTION:The upper layer resist material of a resist having two layers structure is composed of a composition obtd. by dissolving the silylated polyorganosiasesquioxane shown by formula I and the tetra(alkylperoxycarbonyl) benzophenone shown by formula II such as preferably, 3,3',4,4'-tetra(t- butylperoxycarbonyl)benzophenone in the aromatic solvent (such as toluene or xylene), etc., or the ketone solvent (such as methyl isobutyl ketone, etc.). In formula I, (n) is an integer of 10-100, R is alkenyl group (such as -CH=CH2 or -CH2CH=CH2 group, etc.). In formula II, R' is 1-4C a lower alkyl group such as preferably, t-butyl group. Thus, the fine pattern which has high sensitivity and a submicron order can be formed by exposing the resist composition with Deep-UV rays. |
