| 摘要 |
PURPOSE:To improve the production yield of a MOSIC, etc., having a fine structure by mounting a photofading film which has photofading property and a low photofading sensitivity against an exposure wavelength on a substrate having high reflecting power and forming a positive type photoresist film on the film. CONSTITUTION:A high reflection film 20 composed of aluminium having about 1mum in film thickness is mounted on the substrate 10. Next, the film 20 is formed by dissolving styryl pyridium having the photofading property against a wavelength of 436nm in polyvinyl alcohol and a demineralized water, and then the photofading film 26 having the photofading sensitivity of 500mj is formed on the film 20 by applying an obtd. solution on the film 20 according to a spin coating method, followed by thermally treating the obtd. film. Subsequently, the positive type photoresist film 12 having about 1mum in film thickness is formed on the film 26, followed by thermally treating the obtd. film at the temp. of 80 deg.C. Thus, the film 12 is exposed with the exposure wavelength of 436nm and the exposure of 100mj, followed by developing the film 12. As the film 26 is water-soluble, the film 26 dissolves in a developing solution during developing it, thereby being formed the pattern dimension (b) of the photoresist corresponding faithfully to a photomask dimension (a). |
