发明名称 Threshold voltage fluctuation compensation circuit for FETS
摘要 This invention relates to a threshold voltage detection circuit for detecting the threshold voltage of field effect transistors (FETs) and to a semiconductor circuit capable of a stable operation irrespective of the fluctuation of the threshold voltage by utilizing this threshold voltage detection circuit. The source-drain path of first FET is connected in series with that of second FET having substantially the same threshold voltage as that of the first FET and the conductances of these first and second FETs are set to a predetermined ratio to generate a voltage drop associated with the threshold voltage in the first FET. This voltage drop can be used for detecting the threshold voltage and for level-shifting. The output of the series connection of the first and second FETs is applied to the gate of a constant current FET having the same threshold voltage as that of the first and second FETs and the drain current of the constant current FET can thus be set irrespective of the fluctuation of the threshold voltage.
申请公布号 US4857769(A) 申请公布日期 1989.08.15
申请号 US19880143385 申请日期 1988.01.13
申请人 HITACHI, LTD. 发明人 KOTERA, NOBUO;YAMASHITA, KIICHI;KINOSHITA, TAIZO;TANAKA, HIROTOSHI;TANAKA, SATOSHI;NAGATA, MINORU
分类号 H03K19/003 主分类号 H03K19/003
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