发明名称 PROCESS FOR FORMING RESIST PATTERN
摘要 PURPOSE:To form minute patterns efficiently with high precision by forming an antihalation coating on a base plate and rinsing a resist layer contg. a specified polymer formed on said antihalation coating after irradiating with excimer laser through a pattern mask. CONSTITUTION:An antihalation coating is executed on a base plate, and a resist layer contg. a polymer having 10,000-300,000 number average mol.wt. expressed in terms of polystyrene and structure units expressed by formula I and 0.3-15wt.% total halogen content is formed on said antihalation coating. The resist layer is irradiated with excimer laser through a pattern mask, and then developed and rinsed. In formula I, each X, Y1, and Y2 is a halogen atom; each R<1>-R<5> is 1-3C haloalkyl group, etc., or 1-3C haloalkoxy group. Thus, minute patterns are formed efficiently with high precision.
申请公布号 JPH01202747(A) 申请公布日期 1989.08.15
申请号 JP19880028501 申请日期 1988.02.09
申请人 JAPAN SYNTHETIC RUBBER CO LTD 发明人 ISAMOTO YOSHITSUGU;TAKATORI MASASHIGE;ITO MASAKATSU;HARITA YOSHIYUKI
分类号 G03F7/038;G03F7/09;G03F7/11;G03F7/20 主分类号 G03F7/038
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