GaAs field effect transistor having a WSi Schottky gate electrode improved for high-speed operation

摘要

A GaAs Schottky gate field effect transistor includes a GaAs substrate, source and drain electrodes ohmically attached to separated first and second parts of the GaAs substrate and a gate electrode of WSi contacted with a third part of the GaAs substrate between the first and second parts of the GaAs substrate, the gate electrode having a gate width of 30 to 60 mu m.