| 摘要 |
PURPOSE:To obtain the title porcelain for raising withstand voltage and maximum surge current in a low-resistance range, by blending the title porcelain composition containing a valence control element for semiconductor formation and and additive for improving characteristics with a specific amount of Sb2O3 and treating. CONSTITUTION:A semiconductor porcelain composition which comprises BaTiO3 or BaTiO3 as a main component and a titanate, zirconate, stannate, etc. and is blended with one or more rare earth elements of Y, Sb, Nb and Bi as a valence control element for semiconductor formation and further one or more of 0.01-0.03wt.% MnO, 0.1-1.0wt.% SiO2, 0.1-1.0wt.% TiO2 and 0.1-1.3wt.% ZrO2 as an additive for changing a positive resistance temperature coefficient is mixed with 0.005-0.13wt.% Sb2O3, ground, dried, calcined, further ground, granulated, molded and sintered. |
