| 摘要 |
PURPOSE:To improve the efficiency of manufacturing a superior wafer, by chamfering a mirror polished wafer after performing an epitaxial growth on the above wafer end parts of which are not chamfered yet. CONSTITUTION:After performing an epitaxial growth on a mirror polished wafer end parts of which are not chamfered yet, the surface of the wafer is protected by a silicon oxide film 3 and the like. Chamfering is carried out by a wafer chamfering tool and after that, the above surface protecting film is removed by chemical etching.
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