| 摘要 |
<p>PURPOSE:To reduce the number of photoetching processes to reduce the production cost of an active matrix substrate by changing the order of photoetching processes for formation of an electrode film and a semiconductor film to use a pattern for photoetching in common. CONSTITUTION:After a conductive film 2 is stuck throughout the surface of an insulating substrate 1, a photomask having a first pattern is used to form a three-layered semiconductor film 6. A photomask having a second pattern is used to perform photoetching, thereby forming a photoresist 42. Then, the conductive film 2 is separated to a picture element electrode 10 and a scanning electrode 20. Next, the photoresist 42 and an insulating film 7 on it are removed together after the insulating film 7 is stuck throughout the surface, and a connection film 8 is formed by photoetching with a photomask having a third pattern after the connection film 8 is stuck throughout the surface. Thus, the number of times of photoetching is reduced to three.</p> |
