Verfahren zur selbstjustierenden Abdeckung von Flaechenteilen auf der Oberflaeche eines Halbleiterkoerpers mit fotoempfindlichem Abdecklack

摘要

1317697 Semi-conductor devices SIEMENS AG 6 Dec 1971 [11 Dec 1970] 56471/71 Heading H1K A photolacquer mask is provided only on non-metallized surface areas of a semi-conductor body 1 carrying a metallisation pattern 2 by covering the entire surface with photolacquer 3 and exposing it non-selectively to light, the reflective surface of the metallization pattern 2 causing the light entering the photolacquer immediately above it to be multiply reflected through the photolacquer 3 to a sufficient extent to cause it to be rendered soluble in a developer. Above the non-metallized areas there are no multiple reflections and the photolacquer remains insoluble. The multiple reflections may be reinforced by the provision of a very thin, partially transparent reflective metal coating 4 on the photolacquer 3. The photolacquer mask as defined may be used in the consolidation of Cr metallization 2 by electrodeposition, e.g. on a Si or GaAs body 1 containing Schottky-gate field effect transistors. The invention also extends to cases in which the photolacquer mask is required to cover the metallization 2, leaving the non-metallized area uncovered. In these cases the photolacquer 3 is of the type which is rendered insoluble by exposure to light only where multiple reflections occur.