| 摘要 |
The present invention relates to a detector of thermal overload in an integrated circuit, and more particularly an integrated circuit comprising power transistors and lateral MOS type components. This detector comprises two MOS transistors M1, M2 connected in parallel and the drain currents of which are such that they operate within their weak reversal regions, these MOS transistors having relative dimensions W/L such that they allow through the same drain current for a predetermined threshold temperature, and means A for comparing the said drain currents and for detecting the moment at which they become equal. <IMAGE>
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