| 摘要 |
PURPOSE:To be rounded sufficiently with the small etching amount by a method wherein a cooling means is installed, a substrate is cooled, a substrate temperature is lowered and a rise in temperature during an etching operation is suppressed. CONSTITUTION:The following are installed: specimen stages 18, 19 which are housed in a vacuum container 11 and where a substrate to be processed is mounted on their surface; a means used to cool the specimen stages; a means used to fix the substrate to be processed on the specimen stages in a close contact manner; a means used to introduce a gas containing it least fluorine and oxygen or chlorine into the container; a means used to generate an active species by exciting the gas introduced into the container in a region other than in said container; a means used to evacuate the gas inside the container while a substrate temperature is cooled and kept at 25 deg.C or lower, a down-flow type plasma etching operation is executed. By this setup, it is possible to sufficiently round a corner part of a groove and a stepped part with the small etching amount. |
