摘要 |
PURPOSE:To uniformly and stably form a high-quality and large-area functional deposited film with good reproducibility by exciting the hydrogen atom in a plasma producing chamber, and allowing the excited hydrogen atom to chemically react with a gasified specified raw compd. in a film forming space. CONSTITUTION:Gaseous hydrogen is excited by microwave plasma in a bell jar 102 inserted into the cavity resonator 101 having an impedance matching circuit. The excitation state is measured by a condensing probe 122, and controlled. The excited hydrogen atom is passed through a metallic mesh 103, and introduced into the film forming space 116. Meanwhile, the gasified raw material is activated in an activation space 114, and introduced into the space 116. The raw material is composed of the compds. expressed by the general formulas RnMm and AaBb [where R and B are H, X, and hydrocarbonic groups, M is a group III element, A is a group V element, and (m), (n), (a), and (b) are respectively an integer times the valence of R, M, B, and A] and a compd. contg. an element capable of controlling the valence electron of the deposited film. The raw compds. are allowed to chemically react with the excited hydrogen atom, and a deposited film is formed on a substrate 118.
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