发明名称 SEMICONDUCTOR LASER ELEMENT
摘要 <p>PURPOSE:To make laser rays of stripes coincident with each other in a mode, a phase, and a wavelength so as to obtain a high output power element by integrating the outputs of the stripes by a method wherein an conductive region, which is formed into a specified single connection net pattern that is plane- geometrically symmetrical, is constructed on an active layer. CONSTITUTION:A semiconductor laser element provided with a current injection stripe like conductive region 16 for an active layer is provided, where the stripe- like conductive region 16 is formed into a single connection net pattern which is plane-geometrically symmetrical and composed of a single connection net factor 20 and a first and a second linear stripe group 162-168 connected with a first and a second end face of the net factor 20 respectively. And, the linear stripe groups 162-168 are connected with each other inside the single connection net factor 20 through the intermediary of a ramifying region 161, and the stripes near the ramifying region 161 are formed of smooth ramifying curves in shape, the first and the second linear stripe group are equal in numbers and face each other, and the ramifying region 161 is so positioned as to surround a non-excitation or a weak excitation island region 17.</p>
申请公布号 JPH01199486(A) 申请公布日期 1989.08.10
申请号 JP19880175022 申请日期 1988.07.15
申请人 HITACHI LTD 发明人 UMEDA JUNICHI;KAJIMURA TAKASHI;KURODA TAKARO;YAMASHITA SHIGEO
分类号 H01S5/00 主分类号 H01S5/00
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