发明名称 |
SILICON GIGABITS PER SECOND METAL-OXIDE-SEMICONDUCTOR DEVICE PROCESSING |
摘要 |
<p>In a metal-oxide-semiconductor device process, parasitic capacitance is significantly reduced by differentially oxidizing a substrate and a gate mesa thereon prior to ion implantation and "drive-in" of the drain and source regions. This results in a channel region being formed in the substrate beneath and substantially coextensive with the gate mesa. The conductivity of the channel region is different from the conductivity of the adjacent source and drain regions. In one embodiment, the source and drain regions each extend to a greater depth into the substrate with increasing distance from the channel region.</p> |
申请公布号 |
EP0163729(B1) |
申请公布日期 |
1989.08.09 |
申请号 |
EP19850900350 |
申请日期 |
1984.11.28 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
KO, PING, KEUNG |
分类号 |
H01L29/78;H01L21/265;H01L21/28;H01L21/321;H01L21/336;H01L29/08 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|