| 摘要 |
<p>PURPOSE:To obtain the IC, an insulating isolation substrate thereof is easily divided and workability thereof is excellent, by forming a third single crystalline island capable of forming a conductor pattern between a first single crystalline island with a scribing line and a second single crystalline island with a circuit element and the conductor pattern. CONSTITUTION:One surface of an N type Si substrate 1 is etched in an anisotropic manner to form V-shaped grooves, and the surface is coated with a SiO2 film 2. Poly Si 3 is deposited on the film 2 through a CVD method, and ground slightly. The substrate 1 is ground to isolate the single crystalline Si islands 11-13 by the SiO2 film 2. A SiO2 film 5 is bored and the scribing line 6 is formed in the island 11, the circuit element is formed to the island 12, and the conductor pattern 7 on the SiO2 film 5 is formed to the island 13 between the islands 11 and 12 in the same manner as the element on the island 12. When the scribing line 6 on the island 11 is processed by a dicer and divided, cracks are difficult to reach the conductor pattern 7, the cracks of the layer 3 by mounting work are stopped by the island 11, the damage of the island 13 reduces remarkably, the yield of division is improved, and workability is also enhanced.</p> |
