发明名称 |
BURIED FIELD SHIELD FOR AN INTEGRATED CIRCUIT |
摘要 |
<p>A method for fabrication of a buried field shield in a semiconductor substrate. A seed substrate is prepared by depositing an epitaxial layer or a seed wafer and then depositing a heavily doped layer and a thin dielectric. The thin dielectric is patterned for contact holes and then a conductive field shield is deposited and patterned. A thick quartz layer is deposited over the field shield and dielectric. A mechanical substrate is anodically bonded to the quartz of the seed substrate and the original seed wafer is etched back to expose the epitaxial layer for further fabrication.</p> |
申请公布号 |
EP0164646(B1) |
申请公布日期 |
1989.08.09 |
申请号 |
EP19850106580 |
申请日期 |
1985.05.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CADE, PAUL E.;EL-KAREH, BADIH;KIM, ICK W. |
分类号 |
H01L21/02;H01L21/58;H01L21/74;H01L21/762;H01L21/84;H01L23/58;H01L27/00;H01L27/12 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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