| 摘要 |
PURPOSE:To obtain an epitaxial crystal having a stable compsn. of high reliability by maintaining the evaporating component from a vessel for contg. an easily evaporable material of a crystal layer material to be formed on a substrate under specified vapor pressure. CONSTITUTION:A reaction tube 21 is narrowed in a prescribed position B, and a vessel 23 for containing an easily evaporable component among the crystal layer to be formed on a substrate 29 is provided in said position. A vessel 24 for contg. an easily evaporable component and a jig 28 for epitaxial growth are provided so as to sandwich the position B. Thereupon, the substrate 29 is embedded in the recess of the susceptor 26 of the jig 28 and while gaseous H2 is introduced into the tube 21, the temp. distribution in a heating furnace 32 is regulated as shown on a temp. distribution chart 33. In other words, the heating temp. in the part of the vessel 23 is kept lower than the heating temp. in the part of the vessel 24. The vapor pressure of the easily evaporable component in the tube 21 is thus controlled extactly with high accuracy, and the fluctuation in the compsn. of the crystal layer to be formed on the substrate 29 is obviated. |
