| 发明名称 |
Superconducting field effect transistor. |
| 摘要 |
<p>A superconducting field effect transistor which is very small in size and high in dimensional accuracy, and a method of fabricating this transistor are disclosed. According to the above transistor and method, the fine structure of a gate electrode (3) part can be fabricated easily and accurately.</p> |
| 申请公布号 |
EP0327121(A2) |
申请公布日期 |
1989.08.09 |
| 申请号 |
EP19890101951 |
申请日期 |
1989.02.03 |
| 申请人 |
HITACHI, LTD. |
发明人 |
NISHINO, TOSHIKAZU;KAWABE, USHIO;MURAI, FUMIO;KURE, TOKUO;HATANO, MUTSUKO;HASEGAWA, HARUHIRO |
| 分类号 |
H01L29/43 |
主分类号 |
H01L29/43 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
