发明名称 Forming films, e.g. of amorphous silicon.
摘要 <p>A film-forming apparatus comprising a high-frequency application electrode (10) and an earth electrode (20). The high-frequency applying electrode has an uneven surface with hills (50) and valleys (60). An amorphous silicon film is formed uniformly on a substrate (40) at a high speed by feeding a silicon-based gas into this apparatus and generating a glow discharge between the high-frequency application electrode (10) and the earth electrode (20), and positioning the substrate (40) in an atmosphere of the generated glow discharge.</p>
申请公布号 EP0327253(A2) 申请公布日期 1989.08.09
申请号 EP19890300731 申请日期 1989.01.26
申请人 MITSUI TOATSU CHEMICALS, INCORPORATED 发明人 IGARASHI, TAKASHI;FUKUDA, NOBUHIRO
分类号 H01J37/32 主分类号 H01J37/32
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