发明名称 |
Forming films, e.g. of amorphous silicon. |
摘要 |
<p>A film-forming apparatus comprising a high-frequency application electrode (10) and an earth electrode (20). The high-frequency applying electrode has an uneven surface with hills (50) and valleys (60). An amorphous silicon film is formed uniformly on a substrate (40) at a high speed by feeding a silicon-based gas into this apparatus and generating a glow discharge between the high-frequency application electrode (10) and the earth electrode (20), and positioning the substrate (40) in an atmosphere of the generated glow discharge.</p> |
申请公布号 |
EP0327253(A2) |
申请公布日期 |
1989.08.09 |
申请号 |
EP19890300731 |
申请日期 |
1989.01.26 |
申请人 |
MITSUI TOATSU CHEMICALS, INCORPORATED |
发明人 |
IGARASHI, TAKASHI;FUKUDA, NOBUHIRO |
分类号 |
H01J37/32 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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