METHOD OF MANUFACTURING DIELECTRIC ISOLATION REGIONS FOR A SEMICONDUCTOR DEVICE

摘要

A method of manufacturing a semiconductor device which comprises a step of forming a first groove in a semiconductor layer, a step of filling the first groove with a first insulating film, a step of selectively etching the first insulating film in the first groove to form at least one second groove having a small width, and a step of filling the second groove with a second insulating film to form an isolation layer having a large width and substantially flush with the semiconductor layer.