| 摘要 |
<p>This invention relates to a carrier material essentially consisting of aluminium oxide, possibly in combination with a different metal oxide, and to the surface of which a compound of a metal ion of the 3rd or 4th subgroup of the Periodic Table has been applied, so uniformly that, after a treatment at 1000 DEG C for 6 hours, the carrier material does not exhibit diffraction maximums in the X-ray diffraction pattern with a half-value width of less than 1.0 degree of arc (measured over the double diffraction angle). The invention also relates to a process for making the carrier material.</p> |
