| 摘要 |
PURPOSE:To reduce point defect density in a semiconductor epitaxial layer by ion-implanting an impurity to the layer, and then heat-treating the layer in a state that a potential gradient is formed in the thicknesswise direction of the layer. CONSTITUTION:Two ZnSe epitaxial layers 2 implanted with an impurity are superposed in close contact with the surfaces of the layers 2 on a GaAs substrate 1. A voltage E is applied between electrodes 3 formed on the substrate 1. A potential gradient, i.e., an electric field is presented in the thicknesswise direction of the layer 2. After it is heat-treated in a state that a voltage E is applied between the electrodes 3 of the substrate 1 for a predetermined period of time, the substrate 1 is cooled to room temperature in a state that the voltage E is being applied. The implanted impurity is activated at the time of heat treating, carrier is moved from the layer 2, and the carrier density in the layer 2 is reduced at the time of heat treating. Thus, the point defect density in the layer 2 is reduced. |
